دیتاشیت MMDT5551
مشخصات دیتاشیت
| نام دیتاشیت |
MMDT5551
|
| حجم فایل |
80.306
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. MMDT5551
-
Transistor Type:
2 NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
200mA
-
Power Dissipation (Pd):
200mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
100@10mA,5V
-
Collector Cut-Off Current (Icbo):
50nA
-
Collector-Emitter Breakdown Voltage (Vceo):
160V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@50mA,5mA
-
Package:
SOT-323-6
-
Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
